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Chang-Beom Eom

Chang-Beom  Eom

Chang-Beom Eom
Professor

  • Address/E-mail
  • Program Affiliations
  • Education
  • Fields of Interest
  • Publications
  • Awards & Honors
  • Summary
  • Files and Links

    For additional information, see my

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  • Contact Information

    2164 Engineering Centers Building
    1550 Engineering Drive
    Madison, WI 53706
    Tel: 608/263-6305
    Fax: 608/263-9017
    E-mail: eom@engr.wisc.edu

    Program Affiliations

    Education

    Fields of Interest

    Publications

    Books

    Papers

    Selected Awards, Honors and Societies

    • Ho-Am Prize in Engineering (2007) (www.hoamprize.org)
    • Byron Bird Award for Excellence in a Research Publication, University of Wisconsin-Madison (2007)
    • Fellow of the American Phyiscal Society (2004)
    • Invited Professor of University of Geneva, Switzerland (2003)
    • David and Lucile Packard Fellowship (1995)
    • National Science Foundation Young Investigator Award (1994)
    • J. Robert Oppenheimer Fellowship (1993)
    • Eugene P. Wigner Fellowship (1993)
    • Member or American Physical Society and MRS.
    • Member of Sigma XI.

    Summary

    The research of our group has spanned many areas of heteroepitaxy of complex oxides and nanostructure fabrication, from thin film synthesis to characterization and device application of various novel materials. Many new electronic, magnetic and optical devices require sophisticated thin film structures or multilayers, which demand that the thickness be controlled down to one unit cell; other devices may need lateral dimensions to be patterned down to submicron or smaller sizes. Complex oxide materials possess an enormous range of electrical, optical, and magnetic properties. For instance, insulators, high quality metals, dielectrics, ferroelectrics, piezoelectrics, semiconductors, ferromagnetics, transparent conductors, colossal magnetoresistance materials, superconductors, and nonlinear optic materials have all been produced using oxide materials. Therefore, thin films and heterostructures of oxide materials have great potential for novel device applications. A major challenge is to prepare these materials with epitaxial thin film form with atomic layer control and integrate them so that these properties can be fully utilized in electronic devices. Our interest includes the synthesis and characterization of epitaxial oxide heterostructures uniquely suited for electronic devices, spin polarized ferromagnetic tunnel junctions, piezoelectric heterostructures for high frequency medical ultrasound transducers, and superconducting devices.

    Files and Links of Interest




    Copyright 2007 The Board of Regents of the University of Wisconsin System
    Date last modified: 27-Jun-2007
    Content by: eom@engr.wisc.edu
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