Eom, Chang-Beom

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, R. R. Das, Y. H. Chu, P. Shafer, J. X. Zhang, S. Choudhury, V. Vaithyanathan, Y.B. Chen, D. A. Felker, M. D. Biegalski, M.S. Rzchowski, X.Q. Pan, D. G. Schlom, L. Q. Chen, R. Ramesh, and C. B. Eom, Strain-induced Polarization Rotation in Epitaxial (001) BiFeO3 Thin Films , Phys. Rev. Lett. 101, 107602 (2008)

D.A. Tenne, A. Bruchhausen, N.D. Lanzillotti Kimura, A. Fainstein, R.S. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J.H. Haeni, W. Tian, D.G. Schlom, K.J. Choi, D.M. Kim, C.B. Eom, H.P. Sun, X.Q. Pan, Y.L. Li, L.Q. Chen, Q.X. Jia, S.M. Nakhmanson, K.M. Rabe, X.X. Xi, Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy, SCIENCE, 313, 1614 (2006)

T. Zhao , A. Scholl, F. Zavaliche, K. Lee, M. Barry, A. Doran, M. P. Cruz, Y. H. Chu, C. Ederer, N. A. Spaldin, R. R. Das, D. M. Kim, C. B. Eom and R. Ramesh, Electrical control of antiferromagnetic domains in multiferroic BiFeO3 film at room temperature, Nature Materials, 5, 823 (2006)

R.R. Das, D.M. Kim, S.H. Baek, F. Zavaliche, S.Y. Yang, X. Ke, S.K. Streiffer, M.S. Rzchowski, R. Ramesh, X.Q. Pan, and C.B. Eom, Synthesis and Properties of Epitaxial BiFeO3 Thin Films Grown by Sputtering, Appl. Phys. Lett, 88, 242908 (2006)

K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, and C. B. Eom, Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films, Science, 306, 1005 (2004)

C. B. Eom, M. K. Lee, J. H. Choi, L. J. Belenky, X. Song, L. D. Cooley, M. T. Naus, S. Patnaik, J. Jiang, M. Rikel, A. Polyanskii, A. Gurevich, X. Y. Cai, S. D. Bu, S. E. Babcock, E. E. Hellstrom, D. C. Larbalestier, N. Rogado, K. A. Regan, M. A. Hayward, T. He, J. S. Slusky, K. Inumaru, M. K. Haas, and R. J. Cava, High Critical Current Density and Enhanced Irreversibility Field in Superconducting MgB2 Thin Films, Nature, 411 (2001) 558-560.

J.H. Choi, C.B. Eom, G. Rijnders, H. Rogalla and D. H. A. Blank, Growth mode transition from layer-by-layer to step-flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3, Appl Phys. Lett., 79, 1447 (2001)

M.K. Lee, T.K. Nath, C. B. Eom, M.C. Smoak, F. Tsui, Strain Modification of Epitaxial Perovskite Oxide Thin Films Using Structural Transition of Ferroelectric BaTiO3 Substrate, Appl. Phys. Lett. 77 (2000) 3547.

R.A. Rao, D. Lavric, T.K. Nath, C.B. Eom, L. Wu, and F. Tsui, Three-dimensional Strain States and Crystallographic Domain Structures of Epitaxial Thin Films of CMR La_0.8Ca_0.2MnO₃ Manganite, Appl. Phys. Letts. 73 (1998) 3294.

Selected Awards, Honors and Societies

Ho-Am Prize in Engineering (2007) (www.hoamprize.org)
Byron Bird Award for Excellence in a Research Publication, University of Wisconsin-Madison (2007)
Fellow of the American Phyiscal Society (2004)
Invited Professor of University of Geneva, Switzerland (2003)
David and Lucile Packard Fellowship (1995)
National Science Foundation Young Investigator Award (1994)
J. Robert Oppenheimer Fellowship (1993)
Eugene P. Wigner Fellowship (1993)
Member or American Physical Society and MRS.
Member of Sigma XI.

Summary

The research of our group has spanned many areas of heteroepitaxy of complex oxides and nanostructure fabrication, from thin film synthesis to characterization and device application of various novel materials. Many new electronic, magnetic and optical devices require sophisticated thin film structures or multilayers, which demand that the thickness be controlled down to one unit cell; other devices may need lateral dimensions to be patterned down to submicron or smaller sizes. Complex oxide materials possess an enormous range of electrical, optical, and magnetic properties. For instance, insulators, high quality metals, dielectrics, ferroelectrics, piezoelectrics, semiconductors, ferromagnetics, transparent conductors, colossal magnetoresistance materials, superconductors, and nonlinear optic materials have all been produced using oxide materials. Therefore, thin films and heterostructures of oxide materials have great potential for novel device applications. A major challenge is to prepare these materials with epitaxial thin film form with atomic layer control and integrate them so that these properties can be fully utilized in electronic devices. Our interest includes the synthesis and characterization of epitaxial oxide heterostructures uniquely suited for electronic devices, spin polarized ferromagnetic tunnel junctions, piezoelectric heterostructures for high frequency medical ultrasound transducers, and superconducting devices.

Files and Links of Interest

David and Lucile Packard Fellowship (1995)

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Date last modified: 05-Mar-2009
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