Babcock, Susan E.

structure-property relationships for solid-solid interfaces
solid-solid interfaces
crystal defect microstructures
microstructure in films and engineered substrates of/for GaN and other compound semiconductors
applications of electron microscopy in materials research

Publications

Zhaohua Feng, E. G. Lovell, R.L. Englestadt, T.F. Kuech, S.E. Babcock, Simulation of Stress Generation During GaN Lateral Epitaxial Overgrowth, To Internet Journal of Nitride Semiconductors, (2001 - To Appear).
C-Y. Yang, S. E. Babcock, A. Ichinose, A. Goyal, D. M. Kroeger, P. J. Lee, F. A. List, D. P. Norton, J. E. Mathis, M. Paranthaman, and C. Park, Microstructure of Pulsed Laser Deposited YBa₂Cu₃O_7-d Films on Yttria-Stabilized Zirconia/CeO₂ Buffered Biaxially Textured Ni Substrates, submitted September, 2001.
I-Fei Tsu, Jyh-Lih Wang, S.E. Babcock, A.A. Polyanskii, D.C. Larbalestier, and K.E. Sickafus, Structure and Properties of an Intragranular Weak Link in Bi₂Sr₂CaCu₂O_8+x Single Crystals, Physica C 349 (2001) 8-18.
D. M. Feldmann, J. L. Reeves, A. A. Polyanskii, A. Goyal, R. Feenstra, D. F. Lee, M. Paranthaman, D. M. Kroeger, D. K. Christen, S. E. Babcock, and D. C. Larbalestier, Magneto-Optical Imaging of Transport Currents in YBa₂Cu₃O_7-d on RABiTS, IEEE Transactions on Applied Superconductivity 11(1) (2001) 3772-3775.
C. B. Eom, M. K. Lee, J. H. Choi, L. J. Belenky, X. Song, L. D. Cooley, M. T. Naus, S. Patnaik, J. Jiang, M. Rikel, A. Polyanskii, A. Gurevich, X. Y. Cai, S. D. Bu, S. E. Babcock, E. E. Hellstrom, D. C. Larbalestier, N. Rogado, K. A. Regan, M. A. Hayward, T. He, J. S. Slusky, K. Inumaru, M. K. Haas, and R. J. Cava, High Critical Current Density and Enhanced Irreversibility Field in Superconducting MgB₂ Thin Films, Nature 411 (2001) 558-560.
S. Patnaik, L. D. Cooley, A. Gurevich, A. A. Polyanskii, J. Jiang, X. Y. Cai, A. A. Squitieri, M. T. Naus, M. K. Lee, J. H. Choi, L. Belenky, S. D. Bu, J. Letteri, X. Song, D. G. Schlom, S. E. Babcock, C. B. Eom, E. E. Hellstrom, and D. C. Larbalestier, Electronic Anisotropy, Magnetic Field-Temperature Phase Diagram and Their Dependence on Resistivity in c-axis Oriented MgB₂ Thin Films, Superconductor Science and Technology 14 (2001) 315-319.
T. Aytug, B.W. Kang, C.Catoni, E.D. Specht, M. Paranthaman, A. Goyal, D.K. Christen, D.T. Vereblyi, J.Z. Wu, R.E. Ericson, C.L. Thomas, C.-Y. Yang, and S.E. babcock, Growth and Characterization of Conductive SrRuO₃ and LaNiO₃ Multilayers on Textured Ni Tapes for High J_c Bi₂Sr₂CaCu₂O_8+d Coated Conductors, Journal of Materials Research vol. 16, No. 9 (2001) 2661-2669.
K. A. Dunn, S. E. Babcock, D. S. Stone, R. J. Matyi, Ling Zhang and T. F. Kuech, Dislocation Arrangement in a Thick LEO GaN Film on Sapphire, MRS Internet J. Nitride Semicond. Res. 5S1 (2000) W2.11.
Chau-Yun Yang, A. Pashitski, A. Polyanskii, D.C. Larbalestier, S.E. Babcock, A. Goyal, F.A. List, M. Paranthaman, D.P. Norton, and D.M. Kroeger, Microstructural Homogeneity and Electromagnetic Connectivity of YBa₂Cu₃O_7-d Grown on Rolling-Assisted Biaxially Textured Coated Conductor Substrates, Physica C 329 (2000) 114-120.
C.Y. Yang, A. Ichinose, S.E. Babcock, J.S. Morrell, J.E. Mathis, D.T. Vereblyi, M. Paranthaman, D. B. Beach, and D.K. Christen, Microstructure of a High J_c Laser Ablated YBa₂Cu₃O_7-d // Sol-gel deposited NdGaO₃ Buffer Layer // (001)SrTiO₃ Multilayer Structure, Physica C 331 (2000) 73-78.

Selected Awards, Honors and Societies

Member of MRS, (Electron) Microscopy Society of America, American Society for the Advancement of Science.
Editorial Board, J. Interface Science.
Member, Steering Committee, Argonne Electron Microscopy Center.

Summary

The theme of my research is structure-property relationships for solid-solid interfaces. We focus our work on interfaces and defect structures in engineered substrates for growth of large-lattice mismatched compound semiconductors like GaN. Our work on complaint and other engineered substrates for GaN growth focuses on detailed characterization of defect microstructure in the film and substrate with the goal of understanding the mechanisms by which the substrate leads to improved film quality.

The core structure of grain boundaries and other solid-solid interfaces any associated composition change generally are localized to a few atomic plane spacings perpendicular to the boundary. Understanding of the structure and effectiveness of compliant and other engineered substrates demands detailed characterization of the defect type and distribution in the substrate and growth layers. As a result, our research group uses very high spatial resolution techniques for composition and structure determinations with a focus on techniques of high resolution imaging and analystical transmission and scanning transmission electron microscopy.

Date last modified: 31-Aug-2011
Content by: babcock@engr.wisc.edu

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