Jack Ma: Record fast transistors and innovative imaging systems
rofessor Zhenqiang (Jack) Ma received multiple grants in 2010 and 2011 to support his various nanomembrane and imaging research projects. In November 2010, Ma reported promising results in the journal Small from his project to develop thin-film transistors with a record speed of 12 gigahertz.
Ma used a process that indicates the great potential of preselectively doped single-crystal silicon nanomembranes for flexible electronics. His work was funded by a Presidential Early Career Award for Scientists & Engineers and a grant from the U.S. Air Force Office of Scientific Research.
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Additionally, from the U.S. Department of Defense (DOD), Ma has received funding to develop silicon-based vertical cavity surface emitting lasers with collaborators at the University of Texas. If successful, the study could lead to complete silicon-based photonics systems, as silicon-based lasers are the last remaining barrier to entirely replacing the metal wires currently used to connect chips, boards or entire computers.
The DOD also is supporting Ma’s work to develop multispectral imagers, including visible and near infrared wavelengths. Ma will develop a process to image lights at different wavelengths simultaneously, which could lead to a new generation of advanced imaging systems for defense applications.
