Amy E. Wendt Professor, Co-chair Address/E-mail Program Affiliations Education Fields of Interest Publications Summary

Contact Information

Primary Address: 2416 Engineering Hall 1415 Engineering Drive Madison, WI 53706-1691 Tel: 608/890-0804 Fax: 608/265-4623 E-mail: wendt@engr.wisc.edu

Secondary Address: Mailing address: 1415 Engineering Drive Madison, WI 53706

Program Affiliations

• Electrical and Computer Engineering

• Center for Plasma-Aided Manufacturing
• Materials Science Program

Education

• PhD 1988, University of California at Berkeley

Fields of Interest

• plasma processing of materials
• thin-film deposition
• plasma etching
• plasma source design
• modeling and diagnostics
• plasma-aided manufacturing
• plasma generation
• plasma-surface interaction

Publications

• K.H.R.Kirmse, A.E.Wendt, S.B.Disch, J.Z.Wu, I.C.Abraham, J.A.Meyer, R.A.Breun, and R.C.Woods, Mechanisms of SiO2 to Si Selectivity in High Density Fluorocarbon Plasma Etching, to be published in J. Vac. Sci. Technol. A.
• J.A.Meyer, R.Mau, and A.E.Wendt, Plasma Properties Determined with Induction Loop Probes in a Planar Inductively Coupled Plasma Source, J. Appl. Phys. 79, 1298-1302 (1996).
• E.Cielaszyk, K.H.R.Kirmse, R.A.Stewart, and A.E.Wendt, Mechanisms for Polycrystalline Silicon Defects Passivation by Hydrogenation in an Electron Cyclotron Resonance Plasma, Appl. Phys. Letters 67, 3099-3101 (1995).
• J.A.Meyer and A.E.Wendt, Measurements of Electromagnetic Fields in a Planar Radio-Frequency Inductively Coupled Plasma Source, J. Appl. Phys. 78, 90-96 (1995).

Summary

The use of ionized gases for materials processing is a technique now used in a wide array of industries. Understanding of the behavior of the plasmas involved, how they interact with materials substrates and implications for process development is the primary goal of my research, in addition to design of plasma generation systems for new applications.

My work in plasma etching and plasma deposition includes both experimental and theoretical studies of several methods of plasma production, with an emphasis on low-pressure RF induction discharges and other "high density" plasma sources. In a study of plasma etching for fabrication of integrated circuits, we are studying the mechanisms of selective etching of SiO2 over silicon in high-density plasma reactors recently developed for large-diameter silicon wafers. We are using mass spectrometry and gas phase optical techniques to determine the chemical identity of neutral and ionic species reaching the substrate, in an effort to understand differences between reactor types. In discharges for protective or barrier coatings on large substrates. We are also investigating processes to deposit barrier coatings on plastic blood containers. Other work includes reactor and process design for flat panel display fabrication and development of diagnostics for depositing discharges.

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