Luke J. Mawst Professor Address/E-mail Program Affiliations Courses Education Fields of Interest Publications Summary

Contact Information

4617 Engineering Hall 1415 Engineering Drive Madison, WI 53706-1691

Tel: 608/263-1705 Fax: 608/262-1267 E-mail: mawst@engr.wisc.edu

Program Affiliations

• Electrical and Computer Engineering

• Materials Science Program
• Reed Center for Photonics

Courses

• ECE 305: Semiconductor Properties Laboratory
• ECE 335: Microelectronic Devices
• ECE 340: Electronic Circuits I
• ECE 466: Electronics of Solids
• ECE 536: Integrated Optics and Optoelectronics
• ECE 741: Semiconductor Diode Lasers and other Optoelectronic Devices
• ECE 745: Solid State Electronics

Education

• PhD 1987 University of Illinois at Urbana-Champaign

Fields of Interest

• III/V compound semiconductor materials and devices
• metalorganic chemical vapor deposition (MOCVD) growth of semiconductors
• semiconductor lasers

Publications

• N. Tansu, N. J. Kirsch, and L. J. Mawst, "Low-Threshold-Current-Density 1300-nm Dilute-Nitride Quantum Well Lasers," Appl. Phys. Lett., Vol. 81 (14), pp. 2523-2525, September 2002.
• N. Tansu, and L. J. Mawst, "Temperature Sensitivity of 1300-nm InGaAsN Quantum-Well Lasers," IEEE Photon. Technol. Lett., Vol. 14(8), pp. 1052-1054, August 2002.
• Nelson Tansu, Ying-Lan Chang, Tetsuya Takeuchi, David P. Bour, Scott W. Corzine, Michael R.T. Tan, and Luke J. Mawst, "Temperature Analysis and Characteristics of Highly-Strained InGaAs(N)-GaAsP-GaAs (l>1.17 mm) Quantum Well Lasers," IEEE J. Quantum Electronics , Vol. 38, 640 (2002).
• D. Zhou, L. J. Mawst, "High-Power, Single-Mode Antiresonant Reflecting Optical Waveguide - type Vertical cavity Surface Emitting Lasers," IEEE J. Quantum Electron, vol. 38, 1599(2002).
• D. Zhou, Zheng Dai, L. J. Mawst, "Modal Properties of Two-dimensional Antiguided Vertical Cavity Surface Emitting Laser Arrays," IEEE J. Quantum Electronics, Vol. 38, 652 (2002).

Summary

My research interests focus on material growth and fabrication issues for III/V compound semiconductor devices. Improvements in device performance can be directly linked to advances in material growth and process development. I am particularly interested in the development of semiconductor diode lasers using the metalorganic chemical vapor deposition (MOCVD) growth process. The MOCVD process allows for the controlled growth of ultra-thin semiconductor films with abrupt interfaces, permitting the fabrication of high performance quantum-well lasers and other optoelectronic devices. Understanding the influence of the material properties on device characteristics can lead to significant improvements in performance.

Recently, I have been concerned with diode laser development using an aluminum-free material system, InGaAsP/InGaP/GaAs. The Al-free material system offers many advantages for diode lasers including ease of fabrication for complex index-guided device structures and improved reliability. However, realizing the full potential of this material system requires an understanding of the nature of quantum-well growth for Al-free materials, and the influence on device performance. Diode lasers of this type are very desirable for many applications such as high-speed, high resolution printing, telecommunications, and medical therapy.

My other interests include the design and development of a variety of novel device structures such as high-power spatially coherent semiconductor lasers, vertical cavity surface emitters, mid-IR GaSb-based diode lasers, and resonant tunneling diodes (RTD).

Copyright 2007 The Board of Regents of the University of Wisconsin System Date last modified: 31-Aug-2007 Content by: mawst@engr.wisc.edu Accessibility Web services UW-Madison : COE : ECE : ECE Site Map UPDATE PROFILE