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| Tencor FLX-2320 Thin Film Stress Measurement |
Operating procedures are available.
Process Description:
Thin films are applied to wafers by common techniques such as sputtering or various chemical vapor depositions. Stress is one of the properties of a film that can impact the device reliability and lifetime. The deposition parameters determine the type and level of stress that develops on the wafer. A stressed film will cause wafer deformation.
To measure the deformation caused by a thin film on a wafer, a laser lever technique is used to determine curvature of a reflective surface. Since a wafer will have some initial curvature and surface irregularities without any film, a measure is taken before a film is deposited. After the film is deposited, a second measurement is taken and compared to the initial curvature. The results will indicate the change in curvature caused only by the film.
Equipment Description:
The Tencor FLX-2320 contains two solid-state lasers: a Class IIIA laser with 4mW power at 670nm wavelength and a Class IIIB laser with 4mW power at 750nm wavelength. The system can measure stress on all reflecting films. Stress can also be measured as a function of time or temperature. The system has a temperature range from room temperature to 500°C. Measurement results are organized in an easy to read spreadsheet format that can easily be exported to other data handling software such as Lotus or Excel.
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Copyright 2007 The Board of Regents of the University of Wisconsin System
Date last modified: 30-Oct-2001
Date created: 30-Oct-2001
Content by: rabauer@facstaff.wisc.edu
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