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Plasma Therm 74 PECVD

Operating procedures are available — Deposition — Automatic Mode

Plasma Therm 74 PECVD

Process Description:
Plasma Enhanced Chemical Vapor Deposition (PECVD) is performed in a vacuum environment at lower substrate temperatures such as 250-350° C. This process is based on the chemical reaction of gaseous compounds to form a thin film deposition. Since a source of thermal energy is limited, the primary driving force for the reaction is RF plasma.

Equipment Description:
The Plasma Therm 74 is two-chamber unit for plasma deposition and reactive ion etching. The PECVD chamber has 4 gas channels and one purge line. The RF power source is at 13.56 MHz and capable of 500 watts. The system is programmable for manual or automatic deposition. The system is open to all microelectronic substrates and is capable of depositing oxide and nitride.

Gases available:

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Copyright 2007 The Board of Regents of the University of Wisconsin System
Date last modified: 10-Jan-2002
Date created: 27-Aug-2001
Content by: rabauer@facstaff.wisc.edu
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