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Eaton GA-3204 200 KeV

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Eaton GA-3204 200 KeV

Process Description:
Ion implantation is the introduction of dopants into silicon by accelerating atoms through an electrostatic field. The ions strike the surface and are incorporated into the wafer to create regions with various electrical conductivities. The dose and penetration depth of the ions are controlled by the implanter.
System Description:
The Eaton 200 Series is a medium current, automated ion implantation system. The Eaton is a hot filament ion source system with a focusing magnet capable of analyzing beams up to and including atomic mass 125. It has a uniform gradient acceleration tube capable of 200 KV operation (25 KV minimum). The vacuum system includes cyro-pumps on the beam line and processing station. Dose control in automatic and wafer handling is automated.
Implant ions available are:

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Copyright 2007 The Board of Regents of the University of Wisconsin System
Date last modified: 16-Jul-2001
Date created: 16-Jul-2001
Content by: rabauer@facstaff.wisc.edu
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