Wisconsin Center for Applied Microelectronics  
Home :
CVC 601 DC Sputterer, Metals

CURRENT SCHEDULE

Operating procedures are available.
Loading the Substrates
Changing the 6-inch Target
Changing the 3-inch Target
Substrate Heater
Backsputter or Pre-etch
Targets 1 and 2 Operation
Target 3 Operation
Unloading the Substrates

CVC 601 DC Sputterer, Metals

Process Description:
Sputtering is a method of physically depositing metals and insulating materials such as aluminum and SiO2. Sputtering is particularly desirable for the deposition of alloys such as Al-Si-Cu. The basic concept of sputtering is the ionization of an inert gas, such as argon, and accelerating the ions into a solid target material. The ions strike the surface of the material target and atomic clusters are ejected to be deposited onto the wafer surface.
System Description:
The CVC 601 is a batch-type production deposition system. The unit has three DC magnetron target stations: an 8-inch Titanium, 6-inch interchangeable target and a 3-inch interchangeable target. Also available are a quartz heater and a RF electrode for backsputtering of wafers before deposition. High vacuum is achieved by a cryo-pump.
Targets available are:

PDF version of this page.


Copyright 2007 The Board of Regents of the University of Wisconsin System
Date last modified: 02-Jan-2002
Date created: 20-Jul-2001
Content by: rabauer@facstaff.wisc.edu
Accessibility
Web services
Thank you for visiting http://www.engr.wisc.edu/centers/wcam/CVCmetals.html